| PART |
Description |
Maker |
| M2S56D40ATP75A M2S56D40ATP-75 M2S56D40ATP-10 M2S56 |
256M Double Data Rate Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M2S56D40ATP-75L M2S56D40ATP-75AL M2S56D40AKT-75 M2 |
256M Double Data Rate Synchronous DRAM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M2V56D40ATP75A |
256M Double Data Rate Synchronous DRAM
|
Mitsubishi Electric Corporation
|
| HY5DU56422DTP HY5DU56822DTP HY5DU56822DTP-J HY5DU5 |
256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM) 32M X 8 DDR DRAM, 0.75 ns, PDSO66
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| K4D623238B-GQC |
512K x 32Bit x 4 Banks Double Data Rate Synchronous RAM wi Extended Data Out Data Sheet
|
Samsung Electronic
|
| K4D28163HD |
2M x 16Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL Data Sheet
|
Samsung Electronic
|
| EM44BM1684LBB-3F |
512Mb (8M隆驴4Bank隆驴16) Double DATA RATE 2 SDRAM
512Mb (8M×4Bank×16) Double DATA RATE 2 SDRAM
|
Eorex Corporation
|
| EM42AM1684LBA-75FE EM42AM1684LBA-7FE EM42AM1684LBA |
512Mb (8M】4Bank】16) Double DATA RATE SDRAM
512Mb (8M隆驴4Bank隆驴16) Double DATA RATE SDRAM
|
Eorex Corporation
|
| W9725G6JB25I |
Double Data Rate architecture: two data transfers per clock cycle
|
Winbond
|
| K4D263238M K4D263238M-QC45 K4D263238M-QC50 K4D2632 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HYB18T512800B2FL-3S HYB18T512400B2F-3.7 |
512-Mbit Double-Data-Rate-Two SDRAM 64M X 8 DDR DRAM, 0.45 ns, PBGA60
512-Mbit Double-Data-Rate-Two SDRAM 128M X 4 DDR DRAM, 0.5 ns, PBGA60
|
Qimonda AG
|
| HYB25D512160BC-6 HYB25D512800BC-6 |
512-Mbit Double-Data-Rate SDRAM 32M X 16 DDR DRAM, 0.7 ns, PBGA60
512-Mbit Double-Data-Rate SDRAM 64M X 8 DDR DRAM, 0.7 ns, PBGA60
|
Qimonda AG
|
